Ferroic Sensor Having Thin-Film Field-Effect Transistor and Ferroic Layer Applied to Substrate
2013
Patent
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A ferroic component is described, comprising a ferroic layer (10) arranged between two electrodes (12,13), a thin-film field-effect transistor (4) whose gate electrode (3) forms one of the two electrodes (12, 13) of the ferroic layer (10) which is joined to the gate electrode (3) via an intermediate layer (11) acting as a bonding agent, and a substrate that is used as a support. In order to obtain a flexible component it is proposed that the thin-film field-effect transistor (4) on the one hand and the ferroic layer (10) which consists of an internally charged cellular polymer on the other hand are applied to the substrate which is arranged as a flexible plastic film (1), optionally by interposing an insulating layer (2) there between.
Author(s): | Siegfried Bauer and Ingrid Graz and Reinhard Schwödiauer and Christoph Keplinger and Martin Kaltenbrunner and Stéphanie Perichon Lacour and Sigurd Wagner |
Number (issue): | US8461636B2 |
Year: | 2013 |
Department(s): | Robotic Materials |
Bibtex Type: | Patent (patent) |
Paper Type: | Patent |
State: | Published |
URL: | https://patents.google.com/patent/US8461636B2/en |
BibTex @patent{PCT-US-8461636, title = {Ferroic Sensor Having Thin-Film Field-Effect Transistor and Ferroic Layer Applied to Substrate}, author = {Bauer, Siegfried and Graz, Ingrid and Schw{\"o}diauer, Reinhard and Keplinger, Christoph and Kaltenbrunner, Martin and Lacour, Stéphanie Perichon and Wagner, Sigurd}, number = {US8461636B2}, year = {2013}, doi = {}, url = {https://patents.google.com/patent/US8461636B2/en} } |